Innovative etching method for silicon: Higher precision through interlayer

Дата публикации: 26-08-2026 23:20:01

In micro- and nanotechnology, highly precise components with tall, narrow structures (high aspect ratios) made from semiconductor materials like silicon are important. A promising fabrication method is gas-phase metal-assisted chemical etching (MacEtch). In this plasma-free process, a thin metal layer defines the pattern on the silicon substrate. The etching step takes place in a chemical environment, where the reaction occurs only at the interface between the metal and silicon. The metal catalyst gradually sinks into the silicon, directing the etching deeper.

Основное содержимое страницы с новостью.

Схожие новости

#	Наименование новости	Тональность	Информативность	Дата публикации
1	TSMC & Researchers Make Big Breakthrough In Chip Transistor Technology As Part Of Push Towards Developing Sub-1-nanometer Technologies	0	6.27	07-08-2026
2	Caltech breakthrough brings fiber-optic performance to silicon chips	0	12.04	17-08-2026
3	Laser method unlocks 3,000-Kelvin thin-film synthesis for quantum materials	0	7.78	16-04-2026
4	New 3D silicon chip breakthrough could extend Moore’s Law for years	0	10.07	30-05-2026
5	Исследователи из Национального университета Сингапура и компании Applied Materials разработали метод выращивания сверхтонких пленок на чипах	0	6.98	18-06-2026
6	A new ingredient for quantum computing: krypton gas	0	9.81	17-08-2026
7	New buried-growth process enables 2D arrays of position- and orientation-controlled diamond qubits	0	13.63	09-06-2026
8	New light trap design supercharges atom-thin semiconductors	0	11.58	24-03-2026
9	Deuterium enables chip waveguides to generate broadband light from infrared pulses	0	8.95	24-08-2026

Схожие патенты

#	Наименование патента
1	Methods for etching substrate and semiconductor devices
2	METAL-ASSISTED CHEMICAL ETCHING OF A SEMICONDUCTIVE SUBSTRATE WITH HIGH ASPECT RATIO, HIGH GEOMETIC UNIFORMITY, AND CONTROLLED 3D PROFILES
3	ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF

Классификация: Наука. Схожих патента: 3. Схожих новостей: 9. Тональность: 0. Информативность: 7.82. Источник: phys.org.